Influence of support properties on the sound radiated from the vibrations of rectangular plates

The control of the forced vibration response of structures through the optimal tuning of its supports is desirable in many applications. Tuning may enhance the dissipation of vibration energy within the supports, thereby reducing fatigue and structure-borne noise. Two different models were developed to calculate the optimal support stiffness that minimizes the velocity response of homogeneous plates. The first model, based on the wave propagation at the edge, yields a good first cut approximation of the optimal properties. The optimal viscous and viscoelastic support stiffness for minimal reflection at the edge was calculated. Maximum absorption of the incident waves occurs when the viscous support stiffness matches the characteristic mechanical impedances of the plate. The second model, based on the Rayleigh-Ritz method, yields more accurate estimates of the optimal support stiffness required to minimize the forced velocity response of the finite rectangular plate. The optimal support properties calculated from the two different methods were in good agreement. This suggested that the modal response of the plate is strongly influenced by the wave reflections at the edges. Finally, the effects of support properties on the sound radiated from the plate were investigated. The optimal support stiffness that minimizes the radiated sound power was found to be smaller than the value that minimizes the velocity response. The results show that both the velocity response and sound radiation are strongly influenced by dissipation of vibration energy at the edges, and demonstrate that support tuning can yield significant noise and vibration reduction.     

Metallization of U3O8via catalytic electrochemical reduction with Li2O in LiCl molten salt

The concept of a novel electrochemical reduction process for the treatment of spent nuclear fuels in Li₂O-LiCl molten salt was proposed and fresh tests using U₃O₈ powder were carried out to elucidate the reaction mechanism and verify the feasibility of the process. Electrolysis of Li₂O and reduction of U₃O₈ powder took place simultaneously at the cathode part of the electrolysis cell via a catalytic EC mechanism and the conversion of U₃O₈ to U metal was more than 99%. This revised version was published online in June 2006 with corrections to the Cover Date.     

Formation of p-type ZnO film on InP substrate by phosphor doping

ZnO thin film was initially deposited on InP substrate by radio frequency (rf) magnetron sputtering and the diffusion process was performed using the closed ampoule technique where Zn₃P₂ was used as the dopant source. To verify the junction formation of ZnO thin films, the electrical properties were measured, and the effects of Zn₃P₂ diffusion on ZnO thin films were investigated. It is observed that the electrical property of the film is changed from n-type to p-type by dopant diffusion effect. Based on the results, it is confirmed that ZnO thin films can be a potential candidate for ultraviolet (UV) optical devices.     

Brightness and decay time of Zn2SiO4:Mn phosphor particles with spherical shape and fine size

Green-light-emitting Zn₂SiO₄:Mn phosphor particles were synthesized by modified large-scale spray pyrolysis using a colloidal solution containing fumed silica particles. The particles had a fine size, filled morphology, spherical shape and non-aggregation characteristics even after post-treatment at 1150 °C. The luminescence characteristics of Zn₂SiO₄:Mn phosphor particles having spherical shape, such as brightness and decay time under VUV excitation light, were investigated as a function of Mn content. The luminescence intensity exhibits a maximum at 5 mol% Mn-doped powder. The decay time increases consistently with decreasing Mn content and more saturated color coordinates are obtained with the composition having 12 mol% Mn. As a consequence, the 10 mol% Mn-doped powder proved to provide a good combination of favorable luminance and acceptable decay time. The influence of post-treatment temperature on the decay time and photoluminescence characteristics of Zn₂SiO₄:Mn particles was also investigated. Particles post-treated at 1155 °C had the maximum photoluminescence intensity, which was identical to 113% that of the commercial product, and a comparable decay time of 5.8 ms. PACS 81.20.Rg; 78. 55.Hx; 78.40.Ha; 81.05.Hd; 81.40.Tv     

Electrochemical behavior of Li intercalation processes into a Li[NixLi(1/3−2x/3)Mn(2/3−x/3)]O2 cathode

Li[Ni_xLi_(1/3−2x/3)Mn_(2/3−x/3)]O₂ (X=0.17, 0.25, 0.33, 0.5) compounds are prepared by a simple combustion method. The Rietvelt analysis shows that these compounds could be classified as having the α-NaFeO₂ structure. The initial charge-discharge and irreversible capacity increases with the decrease of x in Li[Ni_xLi_(1/3−2x/3)Mn_(2/3−x/3)]O₂. Indeed, Li[Ni_0.50Mn_0.50]O₂ compound shows relatively low initial discharge capacity of 200 mAh/g and large capacity loss during cycling, with Li[Ni_0.17Li_0.22Mn_0.61]O₂ and Li[Ni_0.25Li_0.17Mn₀.₅₈]O₂ compounds exhibit high initial discharge capacity over 245 mAh/g and stable cycle performance in the voltage range of 4.8 -2.0 V. On the other hand, XANES analysis shows that the oxidation state of Ni ion reversibly changes between Ni²⁺ and about Ni³⁺, while the oxidation state of Mn ion sustains Mn⁴⁺ during charge-discharge process. This result does not agree with the previously reported ‘electrochemistry model’ of Li[Ni_xLi_(1/3−2x/3)Mn_(2/3−x/3)]O₂, in which Ni ion changes between Ni²⁺ and NI⁴⁺. Based on these results, we modified oxidation-state change of Mn and Ni ion during charge-discharge process.     

Hyers-Ulam-Rassias stability of homomorphisms in quasi-Banach algebras associated to the Pexiderized Cauchy functional equation

In this paper, we prove the Hyers-Ulam-Rassias stability of homomorphisms in quasi-Banach algebras associated to the Pexiderized Cauchy functional equation. This is applied to investigate homomorphisms between quasi-Banach algebras. The concept of Hyers-Ulam-Rassias stability originated from Th.M. Rassias' stability theorem that appeared in his paper [Th.M. Rassias, On the stability of the linear mapping in Banach spaces, Proc. Amer. Math. Soc. 72 (1978) 297-300].     

Emission and sputtering characteristics of Ne-Ar mixed gas glow discharge plasmas.

The emission characteristics of several Cu lines emitted from a Ne-Ar mixed gas glow discharge plasma were investigated. The addition of small amounts of Ar to a Ne plasma increases the sputtering rate of a Cu sample because Ar ions, which work as the impinging ions for cathode sputtering, are predominantly produced through Penning ionization collisions between Ne metastables and Ar atoms. Ar addition also elevates the number density of electrons in the plasma. These changes occurring in the Ne-Ar mixed gas plasma result in enhanced emission intensities of the Cu lines. The Cu II 270.10-nm and the Cu II 224.70-nm lines yield different intensity dependence on the Ar partial pressure added. This phenomenon is because these Cu II lines are excited principally through different charge transfer processes: collisions with Ne ions for the Cu II 270.10-nm line and collisions with Ar ions for the Cu II 224.70-nm line. The shape of sputtered craters in the Ne-Ar glow discharge plasma was measured. The depth resolution was improved when Ar was added to a Ne plasma because the crater bottoms were flatter with larger Ar partial pressures.     

Angular and NiFe thickness dependence of exchange bias in IrMn/NiFe/IrMn thin film

Exchange biased IrMn/NiFe/IrMn thin films were studied as a function of NiFe thickness. In plane angular dependence of a resonance field distribution which is measured by FMR was analyzed as a combined effect of an unidirectional anisotropy and an uniaxial anisotropy. The unidirectional anisotropic field and the uniaxial anisotropic field were linearly varied with NiFe thickness while the films with a thicker NiFe layer do not follow the linear variation. Resonance field and linewidth variations were also analysed with NiFe thickness.